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NSD1026V-Q1 is a dual-channel, non-inverting, high-speed, low-side gate driver capable of efficiently driving MOSFET/IGBT. For improved stability and durability, NSD1026V-Q1 is provided with negative pressure resistance of - 10V to the input pin. NSD1026V-Q1 is capable of delivering peak source and sink current of up to ±5A, with rail-to-rail drive capability and a typical minimal propagation delay of 19ns. In addition, the driver provides a matching internal propagation delay between the two channels, which makes it ideal for applications such as synchronous rectifiers where timing requirements for dual-gate drives are stringent. This also allows the two channels to be connected together, effectively increasing current drive capacity or using a single input signal to drive two switches in parallel.
• Supply voltage range: 4.5V to 24V
• Peak source and sink current: 5A
• Two independent gate drive channels
• Independent enable pin for each output
• Input pin can withstand negative voltage (-10V)
• Input pin TTL compatible with CMOS
• Typical propagation delay: 19ns
• Maximum delay matching: 4ns
• For higher drive currents, the two outputs can be parallel
• SOP8 and EP-MSOP8 packages available
• Operation temperature range: -40°C to 125°C
• Power module
• Vehicle power supply
• Motor control, solar energy
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